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PC28F256J3C125

更新时间： 2024-11-27 12:26:19

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路
页数	文件大小	规格书
72页	990K
描述
Intel StrataFlashÂ® Memory

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技术参数
数据手册

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PC28F256J3C125 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	TBGA, BGA64,8X8,40
针数：	64	Reach Compliance Code：	compliant
风险等级：	5.68	Is Samacsys：	N
最长访问时间：	125 ns	备用内存宽度：	8
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	NO	JESD-30 代码：	R-PBGA-B64
JESD-609代码：	e1	长度：	15 mm
内存密度：	268435456 bit	内存集成电路类型：	FLASH
内存宽度：	16	湿度敏感等级：	3
功能数量：	1	部门数/规模：	256
端子数量：	64	字数：	16777216 words
字数代码：	16000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	16MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TBGA	封装等效代码：	BGA64,8X8,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE
页面大小：	4/8 words	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
编程电压：	2.7 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.2 mm
部门规模：	128K	最大待机电流：	0.00012 A
子类别：	Flash Memories	最大压摆率：	0.08 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN SILVER COPPER	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	15	切换位：	NO
类型：	NOR TYPE	宽度：	10 mm
Base Number Matches：	1

PC28F256J3C125 数据手册

Intel StrataFlash^®Memory (J3)

28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

programming time

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-020

November 2004

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中文翻译

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与PC28F256J3C125相关器件

型号	品牌	获取价格	描述	数据表
PC28F256J3C-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3F95	NUMONYX	获取价格	Flash, 16MX16, 95ns, PBGA64, LEAD FREE, BGA-64
PC28F256J3F95A	NUMONYX	获取价格	Flash, 16MX16, 95ns, PBGA64, LEAD FREE, BGA-64
PC28F256J3F95A	MICRON	获取价格	256Mb, 65nm Embedded Parallel NOR Flash
PC28F256M29EWHA	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F256M29EWHA	NUMONYX	获取价格	Flash, 16MX16, 100ns, PBGA64, 11 X 13 MM, 1 MM PITCH, GREEN, BGA-64
PC28F256M29EWHB	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F256M29EWHD	MICRON	获取价格	(x8/x16), 3V, Uniform Block, Parallel NOR Flash
PC28F256M29EWL	INTEL	获取价格	PC28F256M29EWL 256mb

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