Datasheet > PC28F256G18FE

PC28F256G18FE

更新时间： 2024-01-26 01:20:49

品牌	Logo	应用领域
镁光 - MICRON		存储
页数	文件大小	规格书
118页	1154K
描述
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

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中文翻译

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数据手册

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PC28F256G18FE 数据手册

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

Features

Micron StrataFlash Embedded Memory

P/N – PC28F128G18xx

P/N – PC28F256G18xx

P/N – PC28F512G18xx

P/N – PC28F00AG18xx

• Power

– Core voltage: 1.7 V - 2.0 V

– I/O voltage: 1.7 V - 2.0 V

– Standby current: 60 μA (typ) for 512-Mbit, 65 nm

– Deep Power-Down mode: 2 μA (typ)

– Automatic Power Savings mode

– 16-word synchronous-burst read current: 23 mA

(typ) @ 108 MHz; 24 mA (typ) @ 133 MHz

• Software

Features

• High-Performance Read, Program and Erase

– 96 ns initial read access

– 108 MHz with zero wait-state synchronous burst

reads: 7 ns clock-to-data output

– 133 MHz with zero wait-state synchronous burst

reads: 5.5 ns clock-to-data output

– 8-, 16-, and continuous-word synchronous-burst

Reads

– Programmable WAIT configuration

– Customer-configurable output driver impedance

– Buffered Programming: 2.0 μs/Word (typ), 512-

Mbit 65 nm

– Micron^®Flash data integrator (FDI) optimized

– Basic command set (BCS) and extended com-

mand set (ECS) compatible

– Common Flash interface (CFI) capable

• Security

– Block Erase: 0.9 s per block (typ)

– 20 μs (typ) program/erase suspend

• Architecture

– 16-bit wide data bus

– Multi-Level Cell Technology

– One-time programmable (OTP) space

64 unique factory device identifier bits

2112 user-programmable OTP bits

– Absolute write protection: V_PP= GND

– Power-transition erase/program lockout

– Individual zero latency block locking

– Individual block lock-down

– Symmetrically-Blocked Array Architecture

– 256-Kbyte Erase Blocks

– 1-Gbit device: Eight 128-Mbit partitions

– 512-Mbit device: Eight 64-Mbit partitions

– 256-Mbit device: Eight 32-Mbit partitions

– 128-Mbit device: Eight 16-Mbit partitions

– Read-While-Program and Read-While-Erase

– Status Register for partition/device status

– Blank Check feature

• Density and packaging

– 128Mb, 256Mb, 512Mbit, and 1-Gbit

– Address-data multiplexed and non-multiplexed

interfaces

– 64-Ball Easy BGA

• Quality and Reliability

– Expanded temperature: –30 °C to +85 °C

– Minimum 100,000 erase cycles per block

– 65nm Process Technology

PDF: 09005aef8448483a

128_256_512_65nm_g18.pdf - Rev. F 8/11 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与PC28F256G18FE相关器件

型号	品牌	获取价格	描述	数据表
PC28F256G18FF	MICRON	获取价格	128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
PC28F256J3A-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3A-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
PC28F256J3C125	INTEL	获取价格	Intel StrataFlashÂ® Memory

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