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P095PH12CJ PDF预览

P095PH12CJ

更新时间: 2024-09-21 08:58:47
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 175 A, 1200 V, SCR

P095PH12CJ 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
标称电路换相断开时间:25 µs配置:SINGLE
关态电压最小值的临界上升速率:20 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
JESD-30 代码:O-MUPM-H3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:175 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

P095PH12CJ 数据手册

 浏览型号P095PH12CJ的Datasheet PDF文件第2页 

与P095PH12CJ相关器件

型号 品牌 获取价格 描述 数据表
P095PH12CJ0 IXYS

获取价格

Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095PH12D2K IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12D2K0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),175A I(T),TO-209AC
P095PH12D2KO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12DG IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12DGO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12DH IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),175A I(T),TO-209AC
P095PH12DH0 IXYS

获取价格

Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095PH12DJ IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12DJ0 IXYS

获取价格

Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)