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P095RH02CHO PDF预览

P095RH02CHO

更新时间: 2024-11-08 13:23:59
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 260K
描述
Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element

P095RH02CHO 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.84
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:200 mA
JESD-30 代码:O-MUPM-H3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:175 A
断态重复峰值电压:200 V重复峰值反向电压:200 V
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

P095RH02CHO 数据手册

 浏览型号P095RH02CHO的Datasheet PDF文件第2页 

与P095RH02CHO相关器件

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P095RH02CJ0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),175A I(T),TO-208VAR
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Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM),
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P095RH02D2K0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM)
P095RH02DG IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P095RH02DH0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM)
P095RH02DK0 LITTELFUSE

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Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM),
P095RH02E2K IXYS

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Silicon Controlled Rectifier, 175 A, 200 V, SCR
P095RH02E2K0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM)
P095RH02E2KO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element