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P095PH12EJO PDF预览

P095PH12EJO

更新时间: 2024-09-21 06:00:43
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 175 A, 1200 V, SCR

P095PH12EJO 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:200 mA
JESD-30 代码:O-MUPM-H3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:175 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

P095PH12EJO 数据手册

 浏览型号P095PH12EJO的Datasheet PDF文件第2页 

与P095PH12EJO相关器件

型号 品牌 获取价格 描述 数据表
P095PH12F2K0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),175A I(T),TO-209AC
P095PH12F2KO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12FH IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
P095PH12FH0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095PH12FHO IXYS

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Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095PH12FJ0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095PH12FJO IXYS

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Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095RH02C2KO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P095RH02CG IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P095RH02CGO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element