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P095PH12EH PDF预览

P095PH12EH

更新时间: 2024-09-21 08:16:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element

P095PH12EH 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
标称电路换相断开时间:30 µs配置:SINGLE
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:600 mA
JESD-30 代码:O-MUPM-H3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:175 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

P095PH12EH 数据手册

 浏览型号P095PH12EH的Datasheet PDF文件第2页 

与P095PH12EH相关器件

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),175A I(T),TO-209AC
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P095PH12F2K0 IXYS

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P095PH12F2KO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
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Silicon Controlled Rectifier, 175A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
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Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095PH12FJ0 IXYS

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P095PH12FJO IXYS

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Silicon Controlled Rectifier, 175 A, 1200 V, SCR