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NZT44H8_NL

更新时间: 2024-09-25 21:19:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
8页 546K
描述
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

NZT44H8_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.44
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

NZT44H8_NL 数据手册

 浏览型号NZT44H8_NL的Datasheet PDF文件第2页浏览型号NZT44H8_NL的Datasheet PDF文件第3页浏览型号NZT44H8_NL的Datasheet PDF文件第4页浏览型号NZT44H8_NL的Datasheet PDF文件第5页浏览型号NZT44H8_NL的Datasheet PDF文件第6页浏览型号NZT44H8_NL的Datasheet PDF文件第7页 
February 2010  
D44H8 / NZT44H8 / D44H11  
NPN Power Amplifier  
Features  
• This device is designed for power amplifier, regulator and switching circuits where speed is important.  
• Sourced from process 4Q.  
C
E
C
B
TO-220  
B
C
E
SOT-223  
D44H8 / D44H11  
NZT44H8  
Absolute Maximum Ratings* TA=25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
D44H8  
D44H11  
NZT44H8  
VCEO  
IC  
Collector-Emitter Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
60  
80  
V
A
8.0  
10.0  
TJ, TSTG  
-55 to +150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics TA=25°C unless otherwise noted  
Max.  
Symbol  
Parameter  
Units  
D44H8  
*NZT44H8  
D44H11  
PD  
Total Device Dissipation  
60  
480  
1.5  
12  
W
mW/°C  
Derate above 25°C  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.1  
°C/W  
°C/W  
62.5  
83.3  
*Device mounted on FR-4 PCB 36mm X 18mm X 1.5mm; mounting pad for the collector lead min. 6cm2.  
© 2010 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
D44H8 / NZT44H8 / D44H11 Rev. B2  
1

NZT44H8_NL 替代型号

型号 品牌 替代类型 描述 数据表
NZT44H8 FAIRCHILD

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