NZT560A_NL

更新时间： 2024-09-25 13:02:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
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7页	202K
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数据手册
替代型号

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NZT560A_NL 数据手册

July 1998

NZT560 / NZT560A

SOT-223

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous.

Absolute Maximum Ratings*

T_{A = 25°C unless otherwise noted}

NZT560/NZT560A

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_{A = 25°C unless otherwise noted}

Max

Characteristic

Symbol

Units

NZT560/NZT560A

Total Device Dissipation

P_D

Thermal Resistance, Junction to Ambient

62.5

°C/W

R_qJA

1998 Fairchild Semiconductor Corporation

nzt560.lwpPrNA 7/10/98 revC

12 3 4 5 6 7

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NZT560A_NL 替代型号

型号	品牌	替代类型	描述	数据表
NZT560A	ONSEMI	功能相似	NPN 低饱和晶体管
NZT560A	FAIRCHILD	功能相似	NPN Low Saturation Transistor

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