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NZT44H8 PDF预览

NZT44H8

更新时间: 2024-09-24 22:06:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 156K
描述
NPN Power Amplifier

NZT44H8 数据手册

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Discrete POWER & Signal  
Technologies  
D44H8  
NZT44H8  
C
E
B
C
C
E
B
TO-220  
SOT-223  
NPN Power Amplifier  
This device is designed for power amplifier, regulator and switching  
circuits where speed is important. Sourced from Process 4Q.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
IC  
Collector-Emitter Voltage  
60  
V
A
Collector Current - Continuous  
8.0  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
D44H8  
*NZT44H8  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
60  
480  
2.1  
1.5  
12  
W
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
62.5  
83.3  
°C/W  
JA  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  

NZT44H8 替代型号

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