Datasheet > NZT45C11D84Z

NZT45C11D84Z

更新时间： 2024-09-25 21:09:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管晶体管
页数	文件大小	规格书
3页	58K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

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技术参数
数据手册

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NZT45C11D84Z 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.72
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	4 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	20	JESD-30 代码：	R-PDSO-G4
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	32 MHz	Base Number Matches：	1

NZT45C11D84Z 数据手册

D45C11

NZT45C11

TO-220

SOT-223

PNP Current Driver Transistor

This device is designed for power amplifier, regulator and switching

circuits where speed is important. Sourced from Process 5P. See

NZT751 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

I_C

Collector-Emitter Voltage

Collector Current - Continuous

4.0

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

D45C11

*NZT45C11

P_D

Total Device Dissipation

480

1.2

9.7

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Case

2.1

R_θ

C/W

Thermal Resistance, Junction to Ambient

62.5

103

C/W

R_θ

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

12 3

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