Datasheet > NZT560_03

NZT560_03

更新时间： 2024-11-13 03:45:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	53K
描述
NPN Low Saturation Transistor

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NZT560_03 数据手册

NZT560/NZT560A

NPN Low Saturation Transistor

•

These devices are designed with high current gain and low saturation

voltage with collector currents up to 3A continuous.

SOT-223

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* T =25°C unless otherwise noted

Symbol

Parameter

NZT560/NZT560A

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

CEO

CBO

EBO

- Continuous

T , T

Operating and Storage Junction Temperature Range

- 55 ~ +150

°C

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

Off Characteristics

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

= 10mA

CEO

CBO

= 100µA

Emitter-Base Breakdown Voltage

Collector Cutoff Current

= 100µA

EBO

= 30V

100

µA

CBO

= 30V, T = 100°C

Emitter Cutoff Current

= 4V

100

EBO

On Characteristics *

DC Current Gain

= 100mA, V = 2V

100

250

= 500mA, V = 2V

NZT560

NZT560A

300

550

= 1A, V = 2V

= 3A, V = 2V

(sat)

Collector-Emitter Saturation Voltage

= 1A, I = 100mA

300

450

400

= 3A, I = 300mA

NZT560

NZT560A

(sat)

(on)

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

= 1A, I = 100mA

1.25

= 1A, V = 2V

Small Signal Characteristics

Output Capacitance

= 10V, I = 0, f = 1MHz

obo

Transition Frequency

= 100mA, V = 5V, f = 100MHz

MHz

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Rev. C3, January 2003

12 3 4 5

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