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NZT560_NL

更新时间: 2024-11-13 19:32:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
5页 176K
描述
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-223, 4 PIN

NZT560_NL 技术参数

生命周期:Obsolete零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.76
外壳连接:BASE最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):75 MHz
Base Number Matches:1

NZT560_NL 数据手册

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May 2009  
NZT560/NZT560A  
NPN Low Saturation Transistor  
Features  
2
• These devices are designed with high current gain and low saturation voltage with  
collector currents up to 3A continuous.  
3
2
1
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings* TA=25°C unless otherwise noted  
Symbol  
VCEO  
Parameter  
Ratings  
Units  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
V
V
VCBO  
VEBO  
IC  
80  
5
V
Collector Current - Continuous  
3
A
TJ, TSTG  
Operating and Storage Junction Temperature Range  
- 55 to +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1)These ratings are based on a maximum junction temperature of 150°C.  
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics TA=25°C unless otherwise noted  
Max.  
Symbol  
Parameter  
Total Device Dissipation  
Units  
NZT560  
NZT560A  
PD  
RθJA  
1
W
Thermal Resistance, Junction to Ambient  
125  
°C/W  
© 2009 Fairchild Semiconductor Corporation  
NZT560/NZT560A Rev. D1  
www.fairchildsemi.com  
1

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