Datasheet > NZT45C11L99Z

NZT45C11L99Z

更新时间： 2024-11-14 08:02:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	58K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

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NZT45C11L99Z 数据手册

D45C11

NZT45C11

TO-220

SOT-223

PNP Current Driver Transistor

This device is designed for power amplifier, regulator and switching

circuits where speed is important. Sourced from Process 5P. See

NZT751 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

I_C

Collector-Emitter Voltage

Collector Current - Continuous

4.0

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

D45C11

*NZT45C11

P_D

Total Device Dissipation

480

1.2

9.7

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Case

2.1

R_θ

C/W

Thermal Resistance, Junction to Ambient

62.5

103

C/W

R_θ

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

12 3

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