Datasheet > NZT45C11S62Z

NZT45C11S62Z

更新时间： 2024-11-14 09:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	95K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

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NZT45C11S62Z 数据手册

January 2010

D45C11

PNP Current Driver Transistor

Features

• This device is designed for power amplifier, regulator and switching

circuits where speed is important.

• Sourced from Process 5P.

• NZT751 for characteristics.

TO-220

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* T_A= 25°C unless otherwise noted

Symbol

V_CEO

Parameter

Value

-80

Units

Collector-Emitter Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

I_C

-4.0

T_J, T_STG

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Max.

Units

P_D

Total Device Dissipation

Derate above 25°C

480

mW/°C

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.1

°C/W

62.5

D45C11 Rev. B2

www.fairchildsemi.com

12 3

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