Datasheet > NXH010P90MNF1PTG

NXH010P90MNF1PTG

更新时间： 2024-11-19 11:12:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
13页	2877K
描述
SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET

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NXH010P90MNF1PTG 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC, 10 mohm

SiC M2 MOSFET, 900 V,

2-PACK Half Bridge

Topology, F1 Package

Advance Information

PIM18 33.8x42.5 (PRESS FIT)

NXH010P90MNF1PTG,

NXH010P90MNF1PG

CASE 180BW

MARKING DIAGRAM

The NXH010P120MNF1 is a power module containing an

10 mW/900 V SiC MOSFET half bridge and a thermistor in an F1

package.

NXH010P90MNF1Pxx

ATYYWW

Features

NXH010P90MNF1PTG= Specific Device Code

NXH010P90MNF1PG = Specific Device Code

• 10 mW/900 V SiC MOSFET Half Bridge

• Thermistor

• Options with Pre−applied Thermal Interface Material (TIM) and

without Pre−applied TIM

= Assembly & Test Site Code

= Year and Work Week Code

YYWW

• Press−fit Pins

PIN CONNECTIONS

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on

page 4 of this data sheet.

Figure 1. NXH010P90MNF1 Schematic Diagram

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Publication Order Number:

March, 2023 − Rev. P4

NXH010P90MNF1/D

12 3 4 5 6 7...13

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