Datasheet > NXH030P120M3F1PTG

NXH030P120M3F1PTG

更新时间： 2024-11-19 17:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	753K
描述
Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NXH030P120M3F1PTG 数据手册

浏览型号NXH030P120M3F1PTG的Datasheet PDF文件第2页

浏览型号NXH030P120M3F1PTG的Datasheet PDF文件第3页

浏览型号NXH030P120M3F1PTG的Datasheet PDF文件第4页

浏览型号NXH030P120M3F1PTG的Datasheet PDF文件第5页

浏览型号NXH030P120M3F1PTG的Datasheet PDF文件第6页

DATA SHEET

www.onsemi.com

PACKAGE PICTURE

Silicon Carbide (SiC)

Module – 30 mohm SiC M3S

MOSFET, 1200 V, 2-PACK

Half Bridge Topology,

F1 Package

Product Preview

PIM18 33.8x42.5 (PRESS FIT)

CASE 180BW

NXH030P120M3F1PTG

MARKING DIAGRAM

The NXH030P120M3F1 is a power module containing

30 mWĂ/ 1200 V SiC MOSFET half−bridge and a thermistor in an F1

package.

NXH030P120M3F1PTG

ATYYWW

Features

• 30 mW / 1200 V M3S SiC MOSFET Half−Bridge

NXH030P120M3F1PTG = Specific Device Code

• Thermistor

= Assembly & Test Site

Code

• Options with Pre−Applied Thermal Interface Material (TIM) and

without Pre−Applied TIM

YYWW

= Year and Work Week

Code

• Press−Fit Pins

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

PIN CONNECTIONS

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH030P120M3F1 Schematic Diagram

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

Publication Order Number:

December, 2023 − Rev. P1

NXH030P120M3F1/D

12 3 4 5 6 7...12

中文翻译

下载PDF

与NXH030P120M3F1PTG相关器件

型号	品牌	获取价格	描述	数据表
NXH040F120MNF1PG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET
NXH040F120MNF1PTG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET
NXH040P120MNF1PG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
NXH040P120MNF1PTG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
NXH100B120H3Q0PG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0PTG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0SG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0STG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH160T120L2Q1PG	ONSEMI	获取价格	功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A
NXH160T120L2Q1SG	ONSEMI	获取价格	功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A