Datasheet > NXH030F120M3F1PTG

NXH030F120M3F1PTG

更新时间： 2024-11-19 17:02:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	675K
描述
Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 4-PACK?Full Bridge Topology, F1 Package

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – 30 mohm SiC M3S

MOSFET, 1200 V, 4-PACK

Full Bridge Topology,

F1ꢀPackage

Product Preview

PIM22 33.8x42.5 (PRESS FIT)

NXH030F120M3F1PTG

CASE 180HL

The NXH030F120M3F1PTG is a power module containing

30 m

ꢀꢁ /1200 V SiC MOSFET full−bridge and a thermistor with

MARKING DIAGRAM

Al O DBC in an F1 package.

Features

NXH030F120M3F1PTG

• 30 mꢀ /1200 V M3S SiC MOSFET Full−Bridge

• Al O DBC

ATYYWW

• Thermistor

NXH030F120M3F1PTG = Specific Device Code

= Assembly & Test Site Code

= Year and Work Week Code

• Options with Pre−Applied Thermal Interface Material (TIM) and

without Pre−Applied TIM

YYWW

• Options with Solderable Pins and Press−Fit Pins

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

PIN CONNECTIONS

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH030F120M3F1PTG Schematic Diagram

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

Publication Order Number:

March, 2024 − Rev. P5

NXH030F120M3F1/D

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
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NXH040P120MNF1PTG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
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