Datasheet > NXH240B120H3Q1SG

NXH240B120H3Q1SG

更新时间： 2023-09-03 20:32:34

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管二极管
页数	文件大小	规格书
15页	1885K
描述
电源集成模块 (PIM) 3 沟道，1200 V IGBT + SiC 升压，80 A IGBT 和 20 A SiC 二极管

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NXH240B120H3Q1SG 数据手册

DATA SHEET

www.onsemi.com

Si/SiC Hybrid Module –

EliteSiC, 3-channel, 1200 V

IGBT + SiC Boost, 80 A IGBT

and 20 A SiC Diode,

Q1 Package

PIM32

(PRESS−FIT)

CASE 180AX

PIM32

(SOLDER−PINS)

CASE 180BQ

NXH240B120H3Q1PG,

NXH240B120H3Q1PG-R,

NXH240B120H3Q1SG

MARKING DIAGRAM

NXH240B120H3Q1xG

ATYYWW

The NXH240B120H3Q1PG is a case power module containing a

three channel BOOST stage. The integrated field stop trench IGBTs

and SiC Diodes provide lower conduction losses and switching losses,

enabling designers to achieve high efficiency and superior reliability.

NXH240B120H3Q1xG = Specific Device Code

x = P or S

= Pb−Free Package

= Assembly & Test Site Code

Features

YYWW = Year and Work Week Code

• 1200 V Ultra Field Stop IGBTs

• Low Reverse Recovery and Fast Switching SiC Diodes

• Low Inductive Layout

• Press−fit Pins

PIN ASSIGNMENTS

• Thermistor

Typical Applications

• Solar Inverters

• ESS

21, 22

19, 20

BYS1

BST1

D13

DC+1−2

11, 12

13, 14

D12

D11

15 E1

ORDERING INFORMATION

See detailed ordering and shipping information in the

dimensions section on page 12 of this data sheet.

DC−1

17, 18

23, 24

BYS2

D23

25, 26 BST2

D22

NTC1 31

D21

10 G2

NTC2

DC−2

7, 8

29, 30 BYS3

27, 28 BST3

D33

DC+3

1, 2

D32

D31

3 E3

5, 6

DC−3

Figure 1. Schematic Diagram

Publication Order Number:

NXH240B120H3Q1PG/D

March, 2023 − Rev. 2

12 3 4 5 6 7...15

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