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NXH015P120M3F1PTG PDF预览

NXH015P120M3F1PTG

更新时间: 2024-11-19 17:01:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 560K
描述
Silicon Carbide (SiC) Module – EliteSiC,?15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

NXH015P120M3F1PTG 数据手册

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DATA SHEET  
www.onsemi.com  
PACKAGE PICTURE  
Silicon Carbide (SiC)  
Module – 15 mohm SiC M3S  
MOSFET, 1200 V, 2-PACK  
Half Bridge Topology, F1  
Package  
Product Preview  
PIM18 33.8 x 42.5 (PRESS FIT)  
CASE 180BW  
NXH015P120M3F1PTG  
MARKING DIAGRAM  
The NXH015P120M3F1 is a power module containing 15 mW/  
1200 V SiC MOSFET halfbridge and a thermistor in an F1 package.  
NXH015P120M3F1PTG  
ATYYWW  
Features  
15 mW / 1200 V M3S SiC MOSFET HalfBridge  
Thermistor  
Options with PreApplied Thermal Interface Material (TIM) and  
without PreApplied TIM  
PressFit Pins  
NXH015P120M3F1PTG = Specific Device Code  
AT  
= Assembly & Test Site  
Code  
YYWW  
= Year and Work Week  
Code  
These Devices are PbFree, Halide Free and are RoHS Compliant  
Typical Applications  
PIN CONNECTIONS  
Solar Inverter  
Uninterruptible Power Supplies  
Electric Vehicle Charging Stations  
Industrial Power  
See Pin Function Description for pin names  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
Figure 1. NXH015P120M3F1PTG Schematic Diagram  
This document contains information on a product under development. onsemi reserves  
the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2023  
1
Publication Order Number:  
February, 2024 Rev. P3  
NXH015P120M3F1/D  

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