Datasheet > NXH040F120MNF1PG

NXH040F120MNF1PG

更新时间： 2024-11-19 11:12:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
13页	1744K
描述
SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET

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NXH040F120MNF1PG 数据手册

DATA SHEET

www.onsemi.com

PACKAGE PICTURE

Silicon Carbide (SiC)

Module – EliteSiC, 40 mohm

SiC M1 MOSFET, 1200 V,

4-PACK Full Bridge

Topology, F1 Package

PIM22 33.8x42.5 (PRESS FIT)

CASE 180BX

Product Preview

NXH040F120MNF1PTG,

NXH040F120MNF1PG

MARKING DIAGRAM

NXH040F120MNF1PTG/PG

ATYYWW

The NXH040F120MNF1 is a power module containing an

40 mW/1200 V SiC MOSFET full bridge and a thermistor in an F1

package.

XXXXX = Specific Device Code

AT = Assembly & Test Site Code

Features

YWW = Year and Work Week Code

• 40 mW/1200 V SiC MOSFET Half−Bridge

• Thermistor

• Options with Pre−Applied Thermal Interface Material (TIM) and

without Pre−Applied TIM

PIN CONNECTIONS

• Press−Fit Pins

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH040F120MNF1 Schematic Diagram

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

Publication Order Number:

March, 2023 − Rev. P3

NXH040F120MNF1/D

12 3 4 5 6 7...13

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与NXH040F120MNF1PG相关器件

型号	品牌	获取价格	描述	数据表
NXH040F120MNF1PTG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET
NXH040P120MNF1PG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
NXH040P120MNF1PTG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
NXH100B120H3Q0PG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0PTG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0SG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0STG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH160T120L2Q1PG	ONSEMI	获取价格	功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A
NXH160T120L2Q1SG	ONSEMI	获取价格	功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A
NXH160T120L2Q2F2S1G	ONSEMI	获取价格	功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A