Datasheet > NXH350N100H4Q2F2P1G

NXH350N100H4Q2F2P1G

更新时间： 2023-09-03 20:36:17

品牌	Logo	应用领域
安森美 - ONSEMI		PC 双极性晶体管
页数	文件大小	规格书
20页	2746K
描述
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package

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DATA SHEET

www.onsemi.com

PACKAGE PICTURE

Si/SiC Hybrid Module –

EliteSiC, I-Type NPC 1000 V,

350 A IGBT, 1200 V,

100 A SiC Diode, Q2 Package

NXH350N100H4Q2F2P1G,

NXH350N100H4Q2F2S1G,

NXH350N100H4Q2F2S1G-R,

NXH350N100H4Q2F2P1G-R

Q2PACK INPC PRESS FIT PINS

CASE 180BH

This high−density, integrated power module combines

high−performance IGBTs with rugged anti−parallel diodes.

Features

• Extremely Efficient Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Module Design Offers High Power Density

• Low Inductive Layout

Q2PACK INPC SOLDER PINS

CASE 180BS

• Low Package Height

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

Typical Applications

NXH350N100H4Q2F2P1G/S1G/S1G−R/P1G−R

ATYYWW

• Solar Inverters

• Uninterruptable Power Supplies Systems

= Pb−Free Package

= Assembly & Test Site Code

YYWW = Year and Work Week Code

PIN CONNECTIONS

See details pin connections on page 2 of this data sheet.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Figure 1.

NXH350N100H4Q2F2P1G/S1G/S1G−R/P1G−R

Schematic Diagram

Publication Order Number:

NXH350N100H4Q2F2P1G/D

March, 2023 − Rev. 5

12 3 4 5 6 7...20

中文翻译

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