型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NXH350N100H4Q2F2S1G | ONSEMI |
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Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q | |
NXH350N100H4Q2F2SG | ONSEMI |
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SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode | |
NXH35C120L2C2ESG | ONSEMI |
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IGBT Module, CIB 1200 V, 35 A IGBT - DBC with enhanced thermal conductivity | |
NXH35C120L2C2S1G | ONSEMI |
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IGBT Module, CIB 1200 V, 35 A IGBT | |
NXH35C120L2C2SG | ONSEMI |
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IGBT Module, CIB 1200 V, 35 A IGBT | |
NXH400N100H4Q2F2PG | ONSEMI |
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SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode | |
NXH400N100H4Q2F2SG | ONSEMI |
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SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode | |
NXH400N100L4Q2F2PG | ONSEMI |
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I-Type NPC 1000 V, 200 A IGBT, 1000 V, 75 A Diode | |
NXH400N100L4Q2F2SG | ONSEMI |
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I-Type NPC 1000 V, 200 A IGBT, 1000 V, 75 A Diode | |
NXH40B120MNQ0SNG | ONSEMI |
获取价格 |
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + |