Datasheet > NXH35C120L2C2ESG

NXH35C120L2C2ESG

更新时间： 2024-11-19 11:16:15

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	612K
描述
IGBT Module, CIB 1200 V, 35 A IGBT - DBC with enhanced thermal conductivity

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中文翻译

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数据手册

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NXH35C120L2C2ESG 数据手册

TMPIM 35 A Enhances CIB

Module

NXH35C120L2C2ESG

The NXH35C120L2C2ESG is a transfer−molded power module

with low thermal resistance substrate containing a

converter−inverter−brake circuit consisting of six 35 A, 1600 V

rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, one 35 A, 1200

V brake IGBT with brake diode and an NTC thermistor.

www.onsemi.com

Features

• Low Thermal Resistance Substrate for Low Thermal Resistance

• 6 mm Clearance Distance between Pin to Heatsink

• Compact 73 mm × 40 mm × 8 mm Package

• Solderable Pins

• Thermistor

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

DIP26 67.8x40

CASE 181AD

Typical Applications

• Industrial Motor Drives

• Servo Drives

MARKING DIAGRAM

DBPLUS

GUP

GVP

GWP

GUN

GVN

GWN

TH1

TH2

ORDERING INFORMATION

†

DBMINUS

Device

Package

Shipping

DIP26

(Pb−Free)

6 Units /

Tube

NXH35C120L2C2ESG

Figure 1. NXH35C120L2C2ESG Schematic Diagram

Publication Order Number:

NXH35C120L2C2ESG/D

October, 2020 − Rev. 1

12 3 4 5 6 7...9

中文翻译

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