Datasheet > NXH40B120MNQ0SNG

NXH40B120MNQ0SNG

更新时间： 2023-09-03 20:36:29

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
13页	641K
描述
Full SiC MOSFET Module \| EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

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NXH40B120MNQ0SNG 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC, 40 mohm

SiC M1 MOSFET, 1200 V +

40 A, 1200 V SiC Diode,

Two Channel Full SiC Boost,

Q0 Package

Q0BOOST

CASE 180AJ

SOLDER PINS

NXH40B120MNQ0SNG

Description

MARKING DIAGRAM

The NXH40B120MNQ0SNG is a power module containing a dual

boost stage. The integrated SiC MOSFETs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

NXH40B120MNQ0SNG

ATYYWW

Features

= Assembly Site Code

= Test Site Code

= Pb− Free Package

= Year and Work Week Code

• 1200 V, 40 mꢀ SiC MOSFETs

• Low Reverse Recovery and Fast Switching SiC Diodes

• 1200 V Bypass and Anti−parallel Diodes

• Low Inductive Layout

YYWW

NXH40B120MNQ0SNG = Specific Device Code

• Solder Pins

• Thermistor

PIN CONNECTIONS

• These Device is Pb−Free, Halogen Free and is RoHS Compliant

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

20 19

18 17

16 15

14 13

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH40B120MNQ0SNG Schematic Diagram

Publication Order Number:

February, 2023 − Rev. 2

NXH40B120MNQ0/D

12 3 4 5 6 7...13

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