Datasheet > NXH600B100H4Q2F2SG

NXH600B100H4Q2F2SG

更新时间： 2024-09-24 11:12:11

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
16页	1775K
描述
Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode

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DATA SHEET

www.onsemi.com

Si/SiC Hybrid Module –

EliteSiC, 3 Channel

Symmetric Boost 1000 V,

200 A IGBT, 1200 V, 60 A SiC

Diode, Q2 Package

PIM44, 93x47 (PRESS FIT)

CASE 180HF

NXH600B100H4Q2F2PG,

NXH600B100H4Q2F2SG,

NXH600B100H4Q2F2SG-R

The NXH600B100H4Q2 is a Si/SiC Hybrid three channel

symmetric boost module. Each channel contains two 1000 V, 200 A

IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an

NTC thermistor.

PIM44, 93x47 (SOLDER PIN)

CASE 180HE

Features

MARKING DIAGRAM

• Extremely Efficient Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Module Design Offers High Power Density

• Low Inductive Layout

NXH600B100H4Q2F2xG

ATYYWW

NXH600B100H4Q2F2xG = Device Code

• Low Package Height

= P or S

= Pb−Free Package

= Assembly & Test Site

Code

= Year and Work Week

Code

• Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Typical Applications

• Solar Inverters

• Uninterruptable Power Supplies Systems

YYWW

PIN CONNECTIONS

ORDERING INFORMATION

See detailed ordering and shipping information on page 11 of

this data sheet.

Figure 1. NXH600B100H4Q2F2 Schematic Diagram

Publication Order Number:

NXH600B100H4Q2F2/D

July, 2023 − Rev. 5

12 3 4 5 6 7...16

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