5秒后页面跳转
NXH450N65L4Q2F2SG PDF预览

NXH450N65L4Q2F2SG

更新时间: 2023-09-03 20:31:35
品牌 Logo 应用领域
安森美 - ONSEMI PC双极性晶体管
页数 文件大小 规格书
21页 2568K
描述
Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 375 A Diode

NXH450N65L4Q2F2SG 数据手册

 浏览型号NXH450N65L4Q2F2SG的Datasheet PDF文件第2页浏览型号NXH450N65L4Q2F2SG的Datasheet PDF文件第3页浏览型号NXH450N65L4Q2F2SG的Datasheet PDF文件第4页浏览型号NXH450N65L4Q2F2SG的Datasheet PDF文件第5页浏览型号NXH450N65L4Q2F2SG的Datasheet PDF文件第6页浏览型号NXH450N65L4Q2F2SG的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
3-Level NPC Inverter  
Module  
NXH450N65L4Q2F2  
The NXH450N65L4Q2F2 is a power module containing a Itype  
neutral point clamped threelevel inverter. The integrated field stop  
trench IGBTs and FRDs provide lower conduction losses and  
switching losses, enabling designers to achieve high efficiency and  
superior reliability.  
PIM40, Q2PACK  
CASE 180BE  
PIM36, Q2PACK  
CASE 180CD  
MARKING DIAGRAM  
NXH450N65L4Q2F2xG  
ATYYWW  
Features  
Neutral Point Clamped ThreeLevel Inverter Module  
650 V Field Stop 4 IGBTs  
Low Inductive Layout  
Solderable Pins  
NXH450N65L4Q2F2x = Specific Device Code  
G
AT  
= PbFree Package  
= Assembly & Test Site Code  
YYWW = Year and Work Week Code  
Thermistor  
Typical Applications  
Solar Inverters  
Uninterruptable Power Supplies Systems  
PIN ASSIGNMENTS  
16~19 BUS+  
Q1  
D1  
20,21 G1A/B  
22 E1  
TP1 40  
Q2  
D5  
D2  
23 G2  
24 E2  
11,13,14 BUSN1  
5,6,7 BUSN2  
OUT1 25~28  
OUT2 29~32  
Q3  
Q4  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
dimensions section on page 5 of this data sheet.  
D6  
D3  
D4  
39 G3  
38 E3  
TP2 35  
T1 33  
T2 34  
9,10 G4A/B  
8 E4  
1~4 BUS  
Figure 1. Schematic Diagram  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
NXH450N65L4Q2F2SG/D  
February, 2023 Rev. 11  

与NXH450N65L4Q2F2SG相关器件

型号 品牌 获取价格 描述 数据表
NXH50C120L2C2ES1G ONSEMI

获取价格

IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity
NXH50C120L2C2ESG ONSEMI

获取价格

IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity
NXH50M65L4C2ESG ONSEMI

获取价格

650V 50A Converter-Inverter-PFCs Module with
NXH50M65L4C2SG ONSEMI

获取价格

650V 50A Converter-Inverter-PFCs Module
NXH50M65L4Q1PTG ONSEMI

获取价格

IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode
NXH50M65L4Q1SG ONSEMI

获取价格

IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode
NXH600B100H4Q2F2PG ONSEMI

获取价格

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diod
NXH600B100H4Q2F2S1G ONSEMI

获取价格

Si/SiC Hybrid Modules, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A S
NXH600B100H4Q2F2SG ONSEMI

获取价格

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diod
NXH600N65L4Q2F2PG ONSEMI

获取价格

Power Integrated Module (PIM), I-Type NPC 650 V, 600 A IGBT, 650 V, 300 A Diode