Datasheet > NXH800H120L7QDSG

NXH800H120L7QDSG

更新时间： 2024-09-24 17:01:47

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	447K
描述
Qdual3 1200 V 800 A Half Bridge IGBT Module

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中文翻译

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NXH800H120L7QDSG 数据手册

DATA SHEET

www.onsemi.com

Half-Bridge IGBT Module,

Qdual3

1200 V, 800 A

PIM11, 152.00 x 62.15 x 20.80

CASE 180HT

NXH800H120L7QDSG

MARKING DIAGRAM

General Description

The NXH800H120L7QDSG is a 1200 V 800 A rated half bridge

IGBT power module. The integrated Field Stop Trench 7 IGBTs

and Gen. 7 diodes provide lower conduction losses and switching

losses, enabling designers to achieve high efficiency and superior

reliability.

NXH800H120L7QDSG = Device Code

= Assembly & Test Site Code

= Year and Work Week Code

Features

YYWW

• 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power

Module

PIN ASSIGNMENTS

• Field Stop Trench 7 IGBTs & Gen.7 Diodes

• NTC Thermistor

• Isolated Base Plate

• Solderable Pins

• Low Inductive Layout

• This is a Pb−Free Device

Typical Applications

• Motor Drives

ORDERING INFORMATION

Device

Package

Shipping

• Servo Drives

NXH800H120L7QDSG

PIM11

8 Units /

• Solar Drives

• Uninterruptible Power Supply Systems (UPS)

(Pb−Free)

Blister Tray

PIN DESCRIPTION

Description

Name

T2 Gate

T2 Emitter

DC−

DC+

TH2

TH1

DC Negative Bus Connection

DC Positive Bus Connection

Thermistor Connection 2

Thermistor Connection 1

T1 Gate

10/11

T1 Emitter

CS1

T1 Collector Sensing

OUT

Center Point of Half Bridge

Figure 1. Schematic

Publication Order Number:

NXH800H120L7QDSG/D

March, 2024 − Rev. 1

12 3 4 5 6 7...9

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