Datasheet > NXH600B100H4Q2F2S1G

NXH600B100H4Q2F2S1G

更新时间： 2023-09-03 20:36:51

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
14页	1768K
描述
Si/SiC Hybrid Modules, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode

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DATA SHEET

www.onsemi.com

Si/SiC Hybrid Module –

EliteSiC, 3 Channel Flying

Capacitor Boost 1000 V,

200ꢀAꢀIGBT, 1200 V, 60 A SiC

Diode, Q2 Package

NXH600B100H4Q2F2S1G,

SNXH600B100H4Q2F2S1G-S

PIM56, 93x47 (SOLDER PIN)

CASE 180BK

The NXH600B100H4Q2S1G is a Si/SiC Hybrid three channel

flying capacitor boost module. Each channel contains two 1000 V,

200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains

an NTC thermistor.

MARKING DIAGRAM

NXH600B100H4Q2F2S1G

ATYYWW

Features

• 3−channel Boost in Q2 Package

• Extremely Efficient Trench with Field Stop Technology

• Low Switching Loss Reduces System Power Dissipation

• Module Design Offers High Power Density

• Low Inductive Layout

NXH600B100H4Q2F2S1G = Specific Device Code

= Pb−Free Package

= Assembly & Test Site Code

YYWW = Year and Work Week Code

Typical Applications

• Solar Inverters

• Uninterruptible Power Supplies Systems

PIN CONNECTIONS

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 4 of this data sheet.

Figure 1. NXH600B100H4Q2F2S1G Schematic Diagram

Publication Order Number:

NXH600B100H4Q2F2S1G/D

March, 2023 − Rev. 1

12 3 4 5 6 7...14

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