Datasheet > NXH80T120L2Q0SG

NXH80T120L2Q0SG

更新时间： 2024-01-26 19:15:18

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
15页	310K
描述
T-Type, Neutral Point Clamp Module

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中文翻译

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数据手册

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NXH80T120L2Q0SG 数据手册

NXH80T120L2Q0PG,

NXH80T120L2Q0SG

T-Type, Neutral Point

Clamp Module

This high−density, integrated power module combines

high−performance IGBTs with rugged anti−parallel diodes for sine

wave inverter applications.

www.onsemi.com

Features

80 A, 1200 V (Bridge)

• Extremely Efficient Trench IGBT with Fieldstop Technology

• Module Design Offers High Power Density

• Low Inductive Layout

50 A, 600 V (Neutral Point Clamp)

T – Type Neutral Point Clamp

• Q0PACK Package with Press−Fit Pins

Typical Applications

• Solar Inverters

• Uninterruptable Power Supplies

Q0PACK

CASE 180AA

Q0PACK

CASE 180AB

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

BRIDGE IGBT

SCHEMATIC

Collector−emitter voltage

Collector current

1200

CES

15,16

L11

T = 80°C

Pulsed Collector Current, T

Limited

260

pulse

by T

jmax

5,14

8,9

10,11

Gate−emitter voltage

13 12

Power Dissapation per IGBT

T = T

total

146

T = 80°C

jmax

3,4

Short Circuit Withstand Time

= 15 V, V = 600 V, T ≤ 150°C

NEUTRAL POINT IGBT

Collector−emitter voltage (Bridge)

MARKING DIAGRAM

600

CES

Collector current

@ T = 80°C

XXXXXXXXXXXXXXXX

YYWW

Pulsed Collector Current, T

Limited

235

pulse

by T

jmax

YYWW = Year and Work Week Code

Gate−emitter voltage

Power Dissapation per IGBT

T = T

total

T = 80°C

jmax

ORDERING INFORMATION

Short Circuit Withstand Time

= 15 V, V = 400 V, T ≤ 150°C

See detailed ordering and shipping information in the

dimensions section on page 13 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

October, 2015 − Rev. 1

NXH80T120L2Q0/D

12 3 4 5 6 7...15

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