Datasheet > NXH80T120L3Q0S3G

NXH80T120L3Q0S3G

更新时间： 2024-09-26 11:12:39

品牌	Logo	应用领域
安森美 - ONSEMI		PC 双极性晶体管
页数	文件大小	规格书
20页	1769K
描述
Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT

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NXH80T120L3Q0S3G 数据手册

Q0PACK Module

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NXH80T120L3Q0S3G/S3TG,

NXH80T120L3Q0P3G

The NXH80T120L3Q0S3/P3G is a power module containing a

T−type neutral point clamped (NPC) three level inverter stage. The

integrated field stop trench IGBTs and fast recovery diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

www.onsemi.com

Features

• Low Switching Loss

• Low V

CESAT

• Compact 65.9 mm x 32.5 mm x 12 mm Package

• Options with Pre−applied Thermal Interface Material (TIM) and

Without Pre−applied TIM

• Options with Solderable Pins and Press−fit Pins

• Thermistor

Q0PACK

CASE 180AA

PRESS−FIT PINS

Q0PACK

CASE 180AB

SOLDERABLE PINS

MARKING DIAGRAMS

Typical Applications

• Solar Inverter

• Uninterruptable Power Supplies

NXH80T120L3Q0S3xG

ATYYWW

15,16

NXH80T120L3Q0P3G

ATYYWW

Half Bridge

IGBTs & Diodes

NXH80T120L3Q0S3G = Specific Device Code

S3xG = S3G or S3TG

G = Pb−free Package

A = Assembly Site Code

T = Test Site Code

5,14

8,9,10,11

YYWW = Year and Work Week Code

13 12

Neutral Point

IGBTs & Diodes

PIN ASSIGNMENTS

12 13 14

15 16

17 18

3,4

NTC

Figure 1. Schematic Diagram

7 6

4 3

2 1

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

ORDERING INFORMATION

See detailed ordering and shipping information in the

dimensions section on page 16 of this data sheet.

Publication Order Number:

NXH80T120L3Q0S3G/D

May, 2020 − Rev. P3

12 3 4 5 6 7...20

中文翻译

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与NXH80T120L3Q0S3G相关器件

型号	品牌	获取价格	描述	数据表
NXH80T120L3Q0S3TG	ONSEMI	获取价格	Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT
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