型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NXH600N65L4Q2F2SG | ONSEMI |
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Power Integrated Module (PIM), I-Type NPC 650 V, 600 A IGBT, 650 V, 300 A Diode | |
NXH75M65L4Q1PTG | ONSEMI |
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IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode | |
NXH75M65L4Q1SG | ONSEMI |
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IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode | |
NXH800A100L4Q2F2P1G | ONSEMI |
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IGBT Module, A-Type NPC 1000 V, 800 A IGBT | |
NXH800A100L4Q2F2P2G | ONSEMI |
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IGBT Module, A-Type NPC 1000 V, 800 A IGBT | |
NXH800A100L4Q2F2S1G | ONSEMI |
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IGBT Module, A-Type NPC 1000 V, 800 A IGBT | |
NXH800A100L4Q2F2S2G | ONSEMI |
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IGBT Module, A-Type NPC 1000 V, 800 A IGBT | |
NXH800H120L7QDSG | ONSEMI |
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Qdual3 1200 V 800 A Half Bridge IGBT Module | |
NXH80B120H2Q0SG | ONSEMI |
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Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode | |
NXH80B120L2Q0SNG | ONSEMI |
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功率集成模块,双升压,1200 V,40 A,IGBT + 1200 V,30 A 硅二极 |