Datasheet > NXH50C120L2C2ESG

NXH50C120L2C2ESG

更新时间： 2024-09-24 11:12:03

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
12页	416K
描述
IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity

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中文翻译

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数据手册

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NXH50C120L2C2ESG 数据手册

TMPIM 50 A CIB/CI Module

NXH50C120L2C2ESG,

NXH50C120L2C2ES1G

The NXH50C120L2C2ESG is a transfer−molded power module

with low thermal resistance substrate containing

a converter-inverter-brake circuit consisting of six 50 A, 1600 V

rectifiers, six 50 A, 1200 V IGBTs with inverse diodes, one 35 A,

1200 V brake IGBT with brake diode and an NTC thermistor.

The NXH50C120L2C2ES1G is a transfer−molded power module

with low thermal resistance substrate containing a converter−inverter

circuit consisting of six 50 A, 1600 V rectifiers, six 50 A, 1200 V

IGBTs with inverse diodes, and an NTC thermistor.

www.onsemi.com

Features

• Low Thermal Resistance Substrate for Low Thermal Resistance

• Lower Package Height than Standard Case Modules

• 6 mm Clearance distance between pin to heatsink

• Compact 73 mm × 40 mm × 8 mm Package

• Solderable Pins

DIP26 67.8x40

CASE 181AD

• Thermistor

MARKING DIAGRAM

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Industrial Motor Drives

• Servo Drives

DBPLUS

GUP

GVP

GWP

GUN

GVN

GWN

TH1

TH2

ORDERING INFORMATION

DBMINUS

Figure 1. NXH50C120L2C2ESG Schematic Diagram

†

Device

Package Shipping

DBPLUS

NXH50C120L2C2ESG

DIP26

(Pb−Free)

6 Units /

Tube

NXH50C120L2C2ES1G

GUP

GVP

GWP

GUN

GVN

GWN

TH1

TH2

DBMINUS

Figure 2. NXH50C120L2C2ES1G Schematic Diagram

Publication Order Number:

October, 2020 − Rev. 1

NXH50C120L2C2/D

12 3 4 5 6 7...12

中文翻译

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