Datasheet > NXH35C120L2C2SG

NXH35C120L2C2SG

更新时间： 2023-09-03 20:38:07

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	552K
描述
IGBT Module, CIB 1200 V, 35 A IGBT

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中文翻译

获取价格

数据手册

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NXH35C120L2C2SG 数据手册

TMPIM 35 A CIB/CI Module

Product Preview

NXH35C120L2C2SG/S1G

The NXH35C120L2C2SG is a transfer−molded power module

containing a converter−inverter−brake circuit consisting of six 35 A,

1600 V rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, one

35 A, 1200 V brake IGBT with brake diode and an NTC thermistor.

The NXH35C120L2C2S1G is a transfer−molded power module

containing a converter−inverter circuit consisting of six 35 A, 1600 V

rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, and an NTC

thermistor.

www.onsemi.com

Features

• Low Thermal Resistance

• 6 mm Clearance Distance from Pin to Heatsink

• Compact 73 mm × 40 mm × 8 mm Package

• Solderable Pins

• Thermistor

TMPIM DIP52

CASE 181AD

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Industrial Motor Drives

• Servo Drives

MARKING DIAGRAM

DBPLUS

GUP

GVP

GWP

GUN

GVN

GWN

TH1

TH2

DBMINUS

ORDERING INFORMATION

Figure 1. NXH35C120L2C2SG Schematic Diagram

Device

Package

Shipping

DBPLUS

NXH35C120L2C2SG

TMPIM

DIP52

6 Units /

Tube

(Pb−Free)

NXH35C120L2C2S1G

TMPIM

DIP52

(Pb−Free)

6 Units /

Tube

GUP

GVP

GWP

GUN

GVN

GWN

This document contains information on a product under

development. ON Semiconductor reserves the right to

change or discontinue this product without notice.

TH1

TH2

DBMINUS

Figure 2. NXH35C120L2C2S1G Schematic Diagram

Publication Order Number:

January, 2020 − Rev. P1

NXH35C120L2C2/D

12 3 4 5 6 7...10

中文翻译

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