Datasheet > NXH100B120H3Q0STG

NXH100B120H3Q0STG

更新时间： 2024-11-22 11:10:27

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
16页	1501K
描述
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

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DATA SHEET

www.onsemi.com

Si/SiC Hybrid Modules –

EliteSiC, Dual Boost,

1200 V, 50 A IGBT + 1200 V,

20 A SiC Diode, Q0 Package

Q0BOOST

CASE 180AJ

SOLDER PINS

Q0BOOST

CASE 180BF

PRESS−FIT PINS

NXH100B120H3Q0,

NXH100B120H3Q0PG-R

The NXH100B120H3Q0 is a power module containing a dual boost

stage. The integrated field stop trench IGBTs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

MARKING DIAGRAM

NXH100B120H3Q0xxG

ATYYWW

Features

= P, PT, S or ST

• 1200 V Ultra Field Stop IGBTs

• Low Reverse Recovery and Fast Switching SiC Diodes

• 1600 V Bypass and Anti−parallel Diodes

• Low Inductive Layout

YYWW = Year and Work Week Code

= Assembly Site Code

= Test Site Code

= Pb−Free Package

• Solderable Pins or Press−Fit Pins

• Thermistor

PIN CONNECTIONS

• Options with Pre−Applied Thermal Interface Material (TIM) and

Without Pre−Applied TIM

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Energy Storage Systems

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

Figure 1. NXH100B120H3Q0xG/PG−R Schematic

Diagram

Publication Order Number:

March, 2023 − Rev. 8

NXH100B120H3Q0/D

12 3 4 5 6 7...16

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