Datasheet > NXH011T120M3F2PTHG

NXH011T120M3F2PTHG

更新时间： 2024-11-19 17:00:59

品牌	Logo	应用领域
安森美 - ONSEMI		PC
页数	文件大小	规格书
17页	994K
描述
Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – 11 mohm SiC M3S

MOSFET, 1200 V,

TNPC Topology, F2 Package

PIM29 56.7x42.5 (PRESS FIT)

CASE 180HR

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MARKING DIAGRAM

NXH011T120M3F2PTHG

The NXH011T120M3F2PTHG is a power module containing an

11 mW / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC

in an F2 package.

NXH011T120M3F2PTHG

ATYYWW

NXH011T120M3F2PTHG = Specific Device Code

Features

YYWW

= Assembly & Test Site Code

= Year and Work Week Code

• 11 mW / 1200 V M3S SiC MOSFET TNPC

• HPS DBC

• Thermistor

• Options with Pre−Applied Thermal Interface Material (TIM) and

without Pre−Applied TIM

PIN CONNECTIONS

• Press−Fit Pins

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

DC+

11~14

G2 S2

16 17

See Pin Function Description for pin names

7~10

22~27

ORDERING INFORMATION

S3 G3

See detailed ordering and shipping information on page 5 of

this data sheet.

TH1

TH2

DC-

1~4

Figure 1. NXH011T120M3F2PTHG Schematic Diagram

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

Publication Order Number:

February, 2024 − Rev. P1

NXH011T120M3F2/D

12 3 4 5 6 7...17

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