Datasheet > NXH020P120MNF1PG

NXH020P120MNF1PG

更新时间： 2024-11-19 11:15:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
13页	2453K
描述
SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NXH020P120MNF1PG 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC, 20 mohm

SiC M1 MOSFET, 1200 V,

2-PACK Half Bridge

Topology, F1 Package

Advance Information

PIM18 33.8x42.5 (PRESS FIT)

NXH020P120MNF1PTG,

NXH020P120MNF1PG

CASE 180BW

MARKING DIAGRAM

The NXH020P120MNF1 is a power module containing an

20 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1

package.

NXH020P120MNF1Pxx

ATYYWW

Features

NXH020P120MNF1PTG= Specific Device Code

NXH020P120MNF1PG = Specific Device Code

• 20 mW/1200 V SiC MOSFET Half Bridge

• Thermistor

= Assembly & Test Site Code

= Year and Work Week Code

YYWW

• Options with Pre−applied Thermal Interface Material (TIM) and

without Pre−applied TIM

• Press−fit Pins

PIN CONNECTIONS

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on

page 4 of this data sheet.

Figure 1. NXH020P120MNF1 Schematic Diagram

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Publication Order Number:

March, 2023 − Rev. P3

NXH020P120MNF1/D

12 3 4 5 6 7...13

中文翻译

下载PDF

与NXH020P120MNF1PG相关器件

型号	品牌	获取价格	描述	数据表
NXH020P120MNF1PTG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET
NXH020U90MNF2PTG	ONSEMI	获取价格	SiC Modules, Vienna Module 900V, 2 x 10 mohm SiC MOSFET, 1200V, 2 x 100A, F2 Package
NXH030F120M3F1PTG	ONSEMI	获取价格	Silicon Carbide (SiC) Module – EliteSiC, 30 m
NXH030P120M3F1PTG	ONSEMI	获取价格	Silicon Carbide (SiC) Module – EliteSiC, 30 m
NXH040F120MNF1PG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET
NXH040F120MNF1PTG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET
NXH040P120MNF1PG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
NXH040P120MNF1PTG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
NXH100B120H3Q0PG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.
NXH100B120H3Q0PTG	ONSEMI	获取价格	Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.