Datasheet > NXH010P120MNF1PTG

NXH010P120MNF1PTG

更新时间： 2024-11-21 11:14:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	2923K
描述
SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC, 10 mohm

SiC M1 MOSFET, 1200 V,

2-PACK Half Bridge

Topology, F1 Package

PIM18 33.8x42.5 (PRESS FIT)

CASE 180BW

Advance Information

NXH010P120MNF1PTNG,

NXH010P120MNF1PNG,

NXH010P120MNF1PTG,

NXH010P120MNF1PG

MARKING DIAGRAM

NXH010P120MNF1z

ATYYWW

NXH010P120MNF1z = Specific Device Code

General Description

= PTNG/PNG/PTG/PG

The NXH010P120MNF1 is a power module containing an

10 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1

package.

YYWW

= Assembly & Test Site Code

= Year and Work Week Code

Features

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of

this data sheet.

• 10 mW/1200 V SiC MOSFET Half Bridge

• Thermistor

• Options With Pre−Applied Thermal Interface Material (TIM) and

Without Pre−Applied TIM

• Press−Fit Pins

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

Figure 1. NXH010P120MNF1 Schematic Diagram

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Publication Order Number:

March, 2023 − Rev. P4

NXH010P120MNF1/D

12 3 4 5 6 7...12

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NXH020F120MNF1PG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200
NXH020F120MNF1PTG	ONSEMI	获取价格	SiC Module, 4-PACK Full Bridge Topology, 1200
NXH020P120MNF1PG	ONSEMI	获取价格	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET