Datasheet > NX8341UN-AZ

NX8341UN-AZ

更新时间： 2024-09-24 22:10:31

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CEL		/
页数	文件大小	规格书
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描述
NECs 1310 nm AlGalnAs MQW-DFB TOSA FOR 10 Gb/s APPLICATION

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NX8341UN-AZ 数据手册

PRELIMINARY DATA SHEET

NEC's 1310 nm

AlGalnAs MQW-DFB TOSA

FOR 10 Gb/s APPLICATION

NX8341 Series

FEATURES

•

INTERNAL OPTICAL ISOLATOR

OPTICAL OUTPUT POWER:

Pf = -2 dBm

NX8341UH

•

LOW THRESHOLD CURRENT

Ith = 8 mA TYP @ TC = 25°C

WIDE OPERATING TEMPERATURE RANGE:

TC = -5 to +85°C

InGaAs MONITOR PIN-PD

NX8341UN

APPLICATIONS

DESCRIPTION

•

10 G BASE-LW/LR

10 G Fiber Channel

NEC's NX8341 Series is a 1310 nm Multiple Quantum

Well (MQW) structured Distributed Feed-Back (DFB) laser

diode TOSA (transmitter optical subassembly) with InGaAs

monitor PIN-PD in a receptacle type package designed for

XENPAK/XPAK/X2/XFP transceiver.

California Eastern Laboratories

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
NX8343TB	NEC	获取价格	DFB Laser Diode Emitter, 1290nm Min, 1330nm Max, LC Connector, Surface Mount
NX8344TP	NEC	获取价格	DFB Laser Diode Emitter, 1290nm Min, 1330nm Max, LC Connector, Surface Mount
NX8346TB	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TB	RENESAS	获取价格	LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TB	CEL	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TB-AZ	CEL	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TS	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TS	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TS-AZ	RENESAS	获取价格	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8346TY	NEC	获取价格	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION