Datasheet > NVTYS007N04CTWG

NVTYS007N04CTWG

更新时间： 2023-09-03 20:40:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	327K
描述
MOSFET – Power, Single, N-Channel, 40 V, 8.6 mΩ, 49 A

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NVTYS007N04CTWG 数据手册

NVTYS007N04C

TYPICAL CHARACTERISTICS

10K

ISS

OSS

100

RSS

= 32 V

= 0 V

T = 25°C

= 25 A

f = 1 MHz

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Charge

1000

100

= 0 V

T = −55°C

d(off)

d(on)

= 10 V

= 32 V

= 15 A

T = 125°C

T = 25°C

R , GATE RESISTANCE (W)

100

0.3

0.4

0.5

, SOURCE−TO−DRAIN VOLTAGE (V)

0.6

0.7

0.8

0.9

1.0

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

100

1000

100

= 25°C

Single Pulse

≤ 10 V

= 25°C

J(initial)

10 ms

= 100°C

J(initial)

0.5 ms

1 ms

10 ms

Limit

DS(on)

Thermal Limit

Package Limit

0.1

100

1000

0.00001

0.0001

0.001

0.01

, DRAIN−TO−SOURCE VOLTAGE (V)

TIME IN AVALANCHE (s)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. I_PEAKvs. Time in Avalanche

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