Datasheet > NVVR26A120M1WSS

NVVR26A120M1WSS

更新时间： 2024-11-26 11:15:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	611K
描述
Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs

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NVVR26A120M1WSS 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC Power

Module for Traction

Inverter, Single-Side

Cooling, 2.6 mohm Rds_on,

1200 V, Half-Bridge,

Straight Power Tabs

AHPM15−CDI MODULE

CASE MODHN

MARKING DIAGRAM

ZZZ

ATYWW

K2R261S

NNNNNNN

NVVR26A120M1WSS

BOTTOM SIDE

Product Description

The NVVR26A120M1WSS is part of the EliteSiC power module

for traction inverter, a revolutionary high mobility compound

semiconductor product family that offers increased performance,

better efficiency, and higher power density in similar and highly

compatible packaging solutions. The module integrates 1200 V SiC

MOSFET in a half−bridge configuration. To enhance reliability

and thermal performance, sintering technology is applied for die

attach. The module is designed to meet the AQG324 standard.

ZZZ

= Assembly Lot Code

K2R261S = Marking Value

NNNN

= Assembly & Test Location

= Year

= Work Week

= Serial Number

Features

PIN CONFIGURATION

• Ultra Low R

DS(on)

• Aluminum Nitride Isolator

• Ultra−low Stray Inductance ~ 7.1 nH

• T

= 175°C for Continuous Operation

vj.Max

NTC1

• Automotive Grade SiC MOSFET Chip Technologies

• Sintered Die Technology for High Reliability Performance

• Automotive Module AQG324 Compliant

• PPAP Capable

NTC_COM

NTC2

Applications

• Automotive EV/HEV− Traction Inverter

ORDERING INFORMATION

Device

NVVR26A120M1WSS

Package

Shipping

Tube

A1HPM

Publication Order Number:

NVVR26A120M1WSS/D

February, 2023 − Rev. 5

12 3 4 5 6 7...12

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