Datasheet > NVTYS009N08HLTWG

NVTYS009N08HLTWG

更新时间： 2023-09-03 20:35:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	393K
描述
MOSFET – Power, Single, N-Channel,

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVTYS009N08HLTWG 数据手册

MOSFET - Power, Single

N-Channel

80 V, 9 mW, 58 A

Product Preview

NVTYS009N08HL

www.onsemi.com

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

DS(on)

MAX

I MAX

(BR)DSS

DS(on)

9 mW @ 10 V

80 V

58 A

• These Devices are Pb−Free and are RoHS Compliant

10.9 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

N−Channel

D (5 − 8)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

G (4)

(Notes 1, 2, 3)

= 100°C

Continuous Drain

Current R

T = 25°C

S (1, 2, 3)

T = 100°C

(Notes 1, 3, 4)

Steady

State

Power Dissipation

T = 25°C

3.2

1.6

279

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

= 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

LFPAK8

3.3x3.3

Source Current (Body Diode)

CASE 760AD

Single Pulse Drain−to−Source Avalanche

199

Energy (I

= 3.4 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

MARKING DIAGRAM

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

009N

08HL

AWLYW

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

= Assembly Location

WL = Wafer Lot

= Year

= Work Week

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Publication Order Number:

March, 2021 − Rev. P2

NVTYS009N08HL/D

12 3 4 5 6 7

下载PDF

与NVTYS009N08HLTWG相关器件

型号	品牌	描述	获取价格	数据表
NVTYS010N04CLTWG	ONSEMI	MOSFET – Power, Single, N-Channel	获取价格
NVTYS010N04CTWG	ONSEMI	MOSFET – Power, Single, N-Channel, 40 V, 12 m	获取价格
NVTYS010N06CLTWG	ONSEMI	MOSFET – Power, Single, N-Channel, 60 V, 9.8	获取价格
NVTYS013N10MCLTWG	ONSEMI	MOSFET – Power, Single, N-Channel,	获取价格
NVTYS014N08HLTWG	ONSEMI	MOSFET – Power, Single, N-Channel,	获取价格
NVTYS014P04M8LTWG	ONSEMI	MOSFET – Power, Single, P-Channel,	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

NVTYS009N08HLTWG

NVTYS009N08HLTWG 数据手册

与NVTYS009N08HLTWG相关器件

与NVTYS009N08HLTWG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVTYS009N08HLTWG

NVTYS009N08HLTWG 数据手册

与NVTYS009N08HLTWG相关器件

与NVTYS009N08HLTWG相关文章

您还可以找

您在本页遇到什么问题？