Datasheet > NVTYS020N08HLTWG

NVTYS020N08HLTWG

更新时间： 2024-10-29 11:15:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	262K
描述
MOSFET – Power, Single, N-Channel,

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NVTYS020N08HLTWG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

80 V, 20 mW, 30 A

MAX

I MAX

(BR)DSS

DS(ON)

20 mW @ 10 V

25 mW @ 4.5 V

80 V

30 A

NVTYS020N08HL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

N−Channel

D (5 − 8)

• Low R

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

DS(on)

G (4)

• These Devices are Pb−Free and are RoHS Compliant

S (1, 2, 3)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

LFPAK8

3.3x3.3

CASE 760AD

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

(Notes 1, 2, 3)

= 100°C

MARKING DIAGRAM

Continuous Drain

Current R

T = 25°C

8.1

5.7

3.2

1.6

123

T = 100°C

(Notes 1, 3, 4)

020N

08HL

AWLYW

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 3)

T = 100°C

020N08HL = Specific Device Code

= Assembly Location

WL = Wafer Lot

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

= Year

= Work Week

Source Current (Body Diode)

35.2

254

Single Pulse Drain−to−Source Avalanche

Energy (I

= 1.5 A)

L(pk)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

3.6

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

47.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which substantially

less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

May, 2023 − Rev. 1

NVTYS020N08HL/D

12 3 4 5 6 7

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