Datasheet > NVTYS9D6P04M8LTWG

NVTYS9D6P04M8LTWG

更新时间： 2023-09-03 20:33:01

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	256K
描述
MOSFET – Power, Single, P-Channel,

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DATA SHEET

www.onsemi.com

MOSFET - Power, Single

P-Channel

MAX

I MAX

(BR)DSS

DS(on)

9.6 mW @ −10 V

16 mW @ −4.5 V

−40 V

−71 A

-40 V, 9.6 mW, -71 A

NVTYS9D6P04M8L

Features

P−Channel MOSFET

D (5−8)

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS

Compliant

G (4)

S (1,2,3)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

−40

Unit

DSS

LFPAK8

3.3x3.3

CASE 760AD

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

= 100°C

−71

−50

(Notes 1, 2, 4)

Steady

State

Power Dissipation

MARKING DIAGRAM

(Notes 1, 2)

37.5

−16

−11

3.9

9D6P

04M8L

AWLYW

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 3, 4)

Steady

State

Power Dissipation

T = 25°C

9D6P04M8L = Specific Device Code

(Notes 1, 3)

T = 100°C

1.9

= Assembly Location

= Wafer Lot

= Year

Pulsed Drain Current

T = 25°C, t = 10 ms

423

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

= Work Week

stg

Source Current (Body Diode)

62.5

260

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Drain)

(Notes 1, 2 and 4)

°C/W

Junction−to−Ambient − Steady State (Note 3)

38.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Assumes heat−sink sufficiently large to maintain constant case temperature

independent of device power.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

May, 2023 − Rev. 1

NVTYS9D6P04M8L/D

12 3 4 5 6

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