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NVTYS9D6P04M8LTWG PDF预览

NVTYS9D6P04M8LTWG

更新时间: 2023-09-03 20:33:01
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 256K
描述
MOSFET – Power, Single, P-Channel,

NVTYS9D6P04M8LTWG 数据手册

 浏览型号NVTYS9D6P04M8LTWG的Datasheet PDF文件第1页浏览型号NVTYS9D6P04M8LTWG的Datasheet PDF文件第3页浏览型号NVTYS9D6P04M8LTWG的Datasheet PDF文件第4页浏览型号NVTYS9D6P04M8LTWG的Datasheet PDF文件第5页浏览型号NVTYS9D6P04M8LTWG的Datasheet PDF文件第6页 
NVTYS9D6P04M8L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
40  
V
(BR)DSS  
D
DraintoSource Breakdown Voltage  
Temperature Coefficient  
V
/T  
J
20  
mV/°C  
(BR)DSS  
Zero Gate Voltage Drain Current  
I
V
DS  
= 0 V,  
T = 25°C  
J
1.0  
mA  
DSS  
GS  
V
= 40 V  
GatetoSource Leakage Current  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
V
V
= V , I = 580 mA  
1  
1.65  
7.7  
11  
3  
9.6  
16  
V
GS(TH)  
GS  
DS  
D
DraintoSource On Resistance  
R
V
= 10 V, I = 25 A  
mW  
DS(on)  
GS  
D
= 4.5 V, I = 20 A  
GS  
D
CHARGES AND CAPACITANCES  
Input Capacitance  
C
2368  
842  
32  
pF  
nC  
iss  
V
GS  
= 0 V, f = 1.0 MHz,  
DS  
Output Capacitance  
C
oss  
V
= 25 V  
Reverse Transfer Capacitance  
Total Gate Charge  
C
rss  
Q
35  
G(TOT)  
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
Q
3.1  
7.5  
3.9  
G(TH)  
V
GS  
= 10 V, V = 20 V,  
DS  
I
= 25 A  
D
Q
GS  
GD  
Q
SWITCHING CHARACTERISTICS, V = 10 V (Note 6)  
GS  
TurnOn Delay Time  
Rise Time  
t
9.6  
29  
ns  
d(on)  
t
r
V
V
= 10 V, V = 20 V,  
DS  
GS  
I
= 25 A, R = 6 W  
D
G
TurnOff Delay Time  
Fall Time  
t
187  
99  
d(off)  
t
f
DRAINSOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
= 0 V,  
= 25 A  
T = 25°C  
0.88  
0.7  
45  
1.25  
V
SD  
GS  
J
I
S
T = 175°C  
J
Reverse Recovery Time  
Charge Time  
t
ns  
RR  
t
t
21.7  
23.3  
37  
a
V
GS  
= 0 V, dI /dt = 100 A/ms,  
S
I
S
= 25 A  
Discharge Time  
b
Reverse Recovery Charge  
Q
56  
nC  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.  
6. Switching characteristics are independent of operating junction temperatures.  
www.onsemi.com  
2
 

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