Datasheet > NVTYS9D6P04M8LTWG

NVTYS9D6P04M8LTWG

更新时间： 2023-09-03 20:33:01

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	256K
描述
MOSFET – Power, Single, P-Channel,

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NVTYS9D6P04M8L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

−40

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V,

T = 25°C

−1.0

DSS

= −40 V

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

= 0 V, V = "20 V

"100

GSS

= V , I = −580 mA

−1

1.65

7.7

−3

9.6

GS(TH)

Drain−to−Source On Resistance

= −10 V, I = −25 A

DS(on)

= −4.5 V, I = −20 A

CHARGES AND CAPACITANCES

Input Capacitance

2368

842

iss

= 0 V, f = 1.0 MHz,

Output Capacitance

oss

= −25 V

Reverse Transfer Capacitance

Total Gate Charge

rss

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

3.1

7.5

3.9

G(TH)

= −10 V, V = −20 V,

= −25 A

SWITCHING CHARACTERISTICS, V = −10 V (Note 6)

Turn−On Delay Time

Rise Time

9.6

d(on)

= −10 V, V = −20 V,

= −25 A, R = 6 W

Turn−Off Delay Time

Fall Time

187

d(off)

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

= 0 V,

= −25 A

T = 25°C

−0.88

−0.7

−1.25

T = 175°C

Reverse Recovery Time

Charge Time

21.7

23.3

= 0 V, dI /dt = 100 A/ms,

= −25 A

Discharge Time

Reverse Recovery Charge

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

www.onsemi.com

123 4 5 6

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