Datasheet > NVTYS027N10MCLTWG

NVTYS027N10MCLTWG

更新时间： 2024-10-29 11:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	372K
描述
MOSFET – Power, Single, N-Channel,

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DATA SHEET

www.onsemi.com

MOSFET – Power, Single,

N-Channel

MAX

I MAX

(BR)DSS

DS(on)

100 V

27 mW @ 10 V

29 A

32.8 mW @ 4.5 V

100 V, 27 mW, 29 A

NVTYS027N10MCL

N−Channel

D (5 − 8)

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

DS(on)

G (4)

• These Devices are Pb−Free and are RoHS Compliant

S (1, 2, 3)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

100

Unit

DSS

LFPAK8

3.3x3.3

CASE 760AD

Continuous Drain

Current R

Steady

= 25°C

= 100°C

= 25°C

= 100°C

State

(Notes 1, 2, 3)

Power Dissipation

Steady

State

(Notes 1, 2)

MARKING DIAGRAM

Continuous Drain

Current R

Steady T = 25°C

State

027N

10MCL

AWLYW

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

Steady T = 25°C

State

3.2

1.6

128

39.5

(Notes 1, 2)

T = 100°C

027N10MCL = Specific Device Code

Pulsed Drain Current

= 25°C, t = 10 ms

= Assembly Location

= Wafer Lot

= Year

Source Current (Body Diode)

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

= Work Week

Single Pulse Drain−to−Source Avalanche

174

260

Energy (I

= 1.5 A)

L(pk)

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8″ from Case for 10 s)

°C

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

May, 2023 − Rev. 1

NVTYS027N10MCL/D

12 3 4 5 6 7

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