Datasheet > NVTYS009N08HLTWG

NVTYS009N08HLTWG

更新时间： 2023-09-03 20:35:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	393K
描述
MOSFET – Power, Single, N-Channel,

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NVTYS009N08HLTWG 数据手册

NVTYS009N08HL

TYPICAL CHARACTERISTICS

120

100

120

= 5 V

4.5 V

4 V

= 5 V

100

to 10 V

3.2 V

2.8 V

T = 25°C

T = 125°C

T = −55°C

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

T = 25°C

= 10 A

= 4.5 V

= 10 V

100

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

100000

10000

1000

100

T = 150°C

= 10 V

= 10 A

T = 125°C

T = 85°C

T = 25°C

0.1

0.01

0.001

−50 −25

100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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1 234 5 6 7

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