Datasheet > NVTYS009N08HLTWG

NVTYS009N08HLTWG

更新时间： 2023-09-03 20:35:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	393K
描述
MOSFET – Power, Single, N-Channel,

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NVTYS009N08HLTWG 数据手册

NVTYS009N08HL

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

53.4

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

T = 25°C

DSS

= 0 V,

= 80 V

T = 125°C

250

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

= 0 V, V = 20 V

GSS

= V , I = 70 mA

1.2

2.2

GS(TH)

Negative Threshold Temperature Co-

efficient

I = 70 mA, ref to 25°C

−5.84

mV/°C

GS(TH)

Drain−to−Source On Resistance

= 10 V, I = 10 A

7.5

9.2

DS(on)

= 4.5 V, I = 10 A

10.9

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 5 V, I = 10 A

46.5

1402

187

10.5

iss

rss

oss

= 0 V, f = 1.0 MHz

Reverse Transfer Capacitance

Output Capacitance

= 40 V

Threshold Gate Charge

Total Gate Charge

= 10 V, V = 40 V, I = 10 A

DS D

G(TH)

G(TOT)

Gate−to−Source Charge

Gate−to−Drain Charge

3.5

4.3

= 10 V, V = 40 V, I = 10 A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Turn−Off Delay Time

Rise Time

d(on)

d(off)

= 6.0 V, V = 64 V,

= 10 A, R = 6 W

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.8

0.7

1.2

= 0 V,

= 10 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dl/dt = 100 A/ms,

= 10 A

Discharge Time

Reverse Recovery Charge

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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