Datasheet > NVTYS009N08HLTWG

NVTYS009N08HLTWG

更新时间： 2023-09-03 20:35:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	393K
描述
MOSFET – Power, Single, N-Channel,

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NVTYS009N08HLTWG 数据手册

NVTYS009N08HL

TYPICAL CHARACTERISTICS

10,000

1,000

100

ISS

OSS

RSS

= 40 V

= 0 V

T = 25°C

= 10 A

f = 1 MHz

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

1000

100

= 0 V

T = 175°C

T = 150°C

T = 125°C

T = 25°C

d(off)

d(on)

= 6 V

= 64 V

T = −55°C

= 10 A

0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

R , GATE RESISTANCE (W)

100

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

100

= 25°C

≤ 10 V

Single Pulse

T (initial) = 25°C

T (initial) = 100°C

10 ms

0.5 ms

1 ms

10 ms

Limit

DS(on)

Thermal Limit

Package Limit

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

, DRAIN−TO−SOURCE VOLTAGE (V)

TIME IN AVALANCHE (s)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Curent vs. Time in

Avalanche

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