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NVTYS014P04M8LTWG

更新时间： 2024-10-29 11:12:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 257K
描述
MOSFET – Power, Single, P-Channel,

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NVTYS014P04M8LTWG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
P-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
13.5 mW @ −10 V  
20 mW @ −4.5 V  
−40 V  
−53 A  
-40 V, 13.5 mW, -53 A  
Product Preview  
P−Channel MOSFET  
D (5−8)  
NVTYS014P04M8L  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
G (4)  
• Low Capacitance to Minimize Driver Losses  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS  
Compliant  
S (1,2,3)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−40  
20  
Unit  
V
LFPAK8  
3.3x3.3  
CASE 760AD  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
−53  
−39  
88  
A
C
D
q
JC  
T
C
(Notes 1, 2, 4)  
MARKING DIAGRAM  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
014P  
04M8L  
AWLYW  
R
(Notes 1, 2)  
q
JC  
T
C
= 100°C  
44  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
−10.4  
−7.3  
3.1  
q
JA  
T = 100°C  
A
(Notes 1, 3, 4)  
014P04M8L = Specific Device Code  
Steady  
State  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
1.6  
WW  
= Work Week  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
210  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
ORDERING INFORMATION  
Source Current (Body Diode)  
I
S
50.6  
260  
A
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State (Drain)  
(Notes 1, 2, 4)  
R
2.47  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 3)  
R
38.7  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
This document contains information on a product under de-  
velopment. onsemi reserves the right to change or discontin-  
ue this product without notice.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2023 − Rev. P3  
NVTYS014P04M8L/D  
 
123456

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