Datasheet > NVTYS008N06CLTWG

NVTYS008N06CLTWG

更新时间： 2024-11-26 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	392K
描述
MOSFET – Power, Single, N-Channel

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NVTYS008N06CLTWG 数据手册

MOSFET – Power, Single

N-Channel

60 V, 8.0 mW, 63 A

NVTYS008N06CL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(on)

8.0 mW @ 10 V

11 mW @ 4.5 V

60 V

63 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

N−Channel

D (5 − 8)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

G (4)

(Notes 1, 2, 3)

= 100°C

S (1, 2, 3)

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 3, 4)

Steady

State

Power Dissipation

T = 25°C

3.2

1.6

279

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

LFPAK8

3.3x3.3

CASE 760AD

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

117

Energy (I

= 3.1 A)

MARKING DIAGRAM

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

008N

06CL

AWLYW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

008N06CL = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

2.7

Unit

= Work Week

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

47.4

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

May, 2021 − Rev. 0

NVTYS008N06CL/D

12 3 4 5 6 7

中文翻译

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NVTYS009N08HLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel,
NVTYS010N04CLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel
NVTYS010N04CTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel, 40 V, 12 m
NVTYS010N06CLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel, 60 V, 9.8
NVTYS013N10MCLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel,
NVTYS014N08HLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel,
NVTYS014P04M8LTWG	ONSEMI	获取价格	MOSFET – Power, Single, P-Channel,
NVTYS020N08HLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel,
NVTYS025P04M8LTWG	ONSEMI	获取价格	MOSFET – Power, Single, P-Channel,
NVTYS027N10MCLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel,

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